p-type doping of GaInNAs quaternary alloys
文献类型：期刊论文
| 作者 | Shi HL ; Duan YF |
| 刊名 | physics letters a
 |
| 出版日期 | 2008 |
| 卷号 | 373期号:1页码:165-168 |
| ISSN号 | 0375-9601 |
| 关键词 | First-principles Alloy Doping Formation energy Transition energy Band offset |
| 通讯作者 | shi hl chinese acad sci inst semicond state key lab superlattices & microstruct pob 912 beijing 100083 peoples r china. e-mail address: hlshi@semi.ac.cn |
| 中文摘要 | using the first-principles band-structure method, we investigate the p-type doping properties and band structural parameters of the random ga1-xinxn1-yasy quaternary alloys. we show that the mg-ga substitution is a better choice than znga to realize the p-type doping because of the lower transition energy level and lower formation energy. the natural valence band alignment of gaas and gainnas alloys is also calculated, and we find that the valence band maximum becomes higher with the increasing in composition. therefore, we can tailor the band offset as desired which is helpful to confine the electrons effectively in optoelectronic devices. (c) 2008 published by elsevier b.v. |
| 学科主题 | 半导体物理 |
| 资助信息 | national basic research program of china (973 program) g2009cb929300 national natural science foundation of china 60521001 60776061this work was supported by the national basic research program of china (973 program) grant no. g2009cb929300 and the national natural science foundation of china under grant nos. 60521001 and 60776061. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7465]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Shi HL,Duan YF. p-type doping of GaInNAs quaternary alloys[J]. physics letters a,2008,373(1):165-168. |
| APA | Shi HL,&Duan YF.(2008).p-type doping of GaInNAs quaternary alloys.physics letters a,373(1),165-168. |
| MLA | Shi HL,et al."p-type doping of GaInNAs quaternary alloys".physics letters a 373.1(2008):165-168. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。