Hillocks and hexagonal pits in a thick film grown by HVPE
文献类型：期刊论文
| 作者 | Duan RF ; Wei TB
|
| 刊名 | microelectronics journal
 |
| 出版日期 | 2008 |
| 卷号 | 39期号:12页码:1556-1559 |
| 关键词 | GaN HVPE Hillocks Pits Cathodoluminescence |
| ISSN号 | 0026-2692 |
| 通讯作者 | wei tb chinese acad sci inst semicond res & dev ctr semicond lighting technol beijing 100083 peoples r china. e-mail address: tbwei@semi.ac.cn |
| 中文摘要 | a gan film with a thickness of 250 mu m was grown on a gan/sapphire template in a vertical hydride vapor phase epitaxy (hvpe) reactor. the full-width at half-maximum (fwhm) values of the film were 141 and 498 arcsec for the (0 0 2) and (1 0 2) reflections, respectively. a sharp band-edge emission with a fwhm of 20 mev at 50 k was observed, which corresponded to good crystalline quality of the film. some almost circular-shaped hillocks located in the spiral growth center were found on the film surface with dimensions of 100 mu m, whose origin was related to screw dislocations and micropipes. meanwhile, large hexagonal pits also appeared on the film surface, which had six triangular {1 0 (1) over bar 1} facets. the strong emission in the pits was dominated by an impurity-related emission at 377 nm, which could have been a high-concentration oxygen impurity. (c) 2008 elsevier ltd. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | national high technology program of china 2006aa03a111 2006aa03a143 this work was supported by national high technology program of china under grant nos. 2006aa03a111 and 2006aa03a143. we would also like to thank professor j. xu from peking university for assistance with the cathodoluminescence test. |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7469]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Duan RF,Wei TB. Hillocks and hexagonal pits in a thick film grown by HVPE[J]. microelectronics journal,2008,39(12):1556-1559. |
| APA | Duan RF,&Wei TB.(2008).Hillocks and hexagonal pits in a thick film grown by HVPE.microelectronics journal,39(12),1556-1559. |
| MLA | Duan RF,et al."Hillocks and hexagonal pits in a thick film grown by HVPE".microelectronics journal 39.12(2008):1556-1559. |
入库方式： OAI收割
来源：半导体研究所
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