Enhanced charge storage characteristics of silicon nanocrystals fabricated by electron-beam coevaporation of Si and SiOx(x=1 or 2)
文献类型：期刊论文
| 作者 | Chen C (Chen Chen) ; Jia R (Jia Rui) ; Li WL (Li Weilong) ; Li HF (Li Haofeng) ; Ye TC (Ye Tianchun) ; Liu XY (Liu Xinyu) ; Liu M (Liu Ming) ; Kasai S (Kasai Seiya) ; Tamotsu H (Tamotsu Hashizume) ; Wu NJ (Wu Nanjian) |
| 刊名 | journal of vacuum science & technology b
 |
| 出版日期 | 2009 |
| 卷号 | 27期号:6页码:2462-2467 |
| 关键词 | electron beam deposition |
| ISSN号 | 1071-1023 |
| 通讯作者 | jia, r, chinese acad sci, inst microelect, beijing 100029, peoples r china. 电子邮箱地址: jiarui@ime.ac.cn |
| 中文摘要 | in this article, a simple and flexible electron-beam coevaporation (ebce) technique has been reported of fabrication of the silicon nanocrystals (si ncs) and their application to the nonvolatile memory. for ebce, the si and siox(x=1 or 2) were used as source materials. transmission electron microscopy images and raman spectra measurement verified the formation of the si ncs. the average size and area density of the si ncs can be adjusted by increasing the si:o weight ratio in source material, which has a great impact on the crystalline volume fraction of the deposited film and on the charge storage characteristics of the si ncs. a memory window as large as 6.6 v under +/- 8 v sweep voltage was observed for the metal-oxide-semiconductor capacitor structure with the embedded si ncs. |
| 学科主题 | 微电子学 |
| 收录类别 | SCI |
| 资助信息 | 973 projects 2006cb604904 2009cb939703 chinese nsf 60706023 606760019040100290607022cas yz0635 |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7483]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen C ,Jia R ,Li WL ,et al. Enhanced charge storage characteristics of silicon nanocrystals fabricated by electron-beam coevaporation of Si and SiOx(x=1 or 2)[J]. journal of vacuum science & technology b,2009,27(6):2462-2467. |
| APA | Chen C .,Jia R .,Li WL .,Li HF .,Ye TC .,...&Wu NJ .(2009).Enhanced charge storage characteristics of silicon nanocrystals fabricated by electron-beam coevaporation of Si and SiOx(x=1 or 2).journal of vacuum science & technology b,27(6),2462-2467. |
| MLA | Chen C ,et al."Enhanced charge storage characteristics of silicon nanocrystals fabricated by electron-beam coevaporation of Si and SiOx(x=1 or 2)".journal of vacuum science & technology b 27.6(2009):2462-2467. |
入库方式： OAI收割
来源：半导体研究所
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