The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers
文献类型：期刊论文
| 作者 | Zhu, JH (Zhu, J. H.) ; Wang, LJ (Wang, L. J.) ; Zhang, SM (Zhang, S. M.) ; Wang, H (Wang, H.) ; Zhao, DG (Zhao, D. G.) ; Zhu, JJ (Zhu, J. J.) ; Liu, ZS (Liu, Z. S.) ; Jiang, DS (Jiang, D. S.) ; Qiu, YX (Qiu, Y. X.) ; Yang, H (Yang, H.) |
| 刊名 | journal of physics d-applied physics
 |
| 出版日期 | 2009 |
| 卷号 | 42期号:23页码:art.no.235104 |
| ISSN号 | 0022-3727 |
| 关键词 | MULTIPLE-QUANTUM WELLS |
| 通讯作者 | zhu, jh, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. 电子邮箱地址: smzhang@red.semi.ac.cn |
| 中文摘要 | two emission peaks were observed in the low temperature photoluminescence (ltpl) spectra of an ingan/gan multiple quantum well (mqw) structure before and after nanopillar fabrication. after nanopillar fabrication it is found that among the two peaks the longer wavelength peak exhibits a clear blue shift and has a much stronger enhancement in ltpl intensity than the shorter one. combined with x-ray diffraction and spatially resolved cathodoluminescence analyses, the difference induced by nanopillar fabrication is ascribed to different strain relaxation states in the lower and upper quantum well layers. it is found that the lower qw layers of the as-grown mqw which causes the longer wavelength pl peak are more strained, while the upper ones are almost fully strain-relaxed. therefore, the nanopillar fabrication induces much less strain relaxation in the upper part of the mqw than in the lower one. |
| 学科主题 | 半导体物理 |
| 资助信息 | national natural science foundation of china 60506001 607760476097604560836003national basic research programme of china 2007cb936700 national science foundation for distinguished young scholars 60925017 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7521]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhu, JH ,Wang, LJ ,Zhang, SM ,et al. The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers[J]. journal of physics d-applied physics,2009,42(23):art.no.235104. |
| APA | Zhu, JH .,Wang, LJ .,Zhang, SM .,Wang, H .,Zhao, DG .,...&Yang, H .(2009).The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers.journal of physics d-applied physics,42(23),art.no.235104. |
| MLA | Zhu, JH ,et al."The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers".journal of physics d-applied physics 42.23(2009):art.no.235104. |
入库方式： OAI收割
来源：半导体研究所
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