中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Analysis on the high luminous flux white light from GaN-based laser diode

文献类型:期刊论文

作者Xu Y ; Hu H ; Chen L ; Song G ; Zhuang W
刊名applied physics b-lasers and optics
出版日期2010
卷号98期号:1页码:83-86
关键词EMITTING-DIODES
ISSN号0946-2171
通讯作者xu, y, chinese acad sci, inst semicond, beijing 100083, peoples r china. 电子邮箱地址: xuyun@red.semi.ac.cn
中文摘要we fabricated a phosphor-conversion white light using an ingan laser diode that emits 445 nm and phosphor that emits in the yellow region when excited by the blue laser light. at 500 ma injection current the luminous flux and the luminous efficacy were 113 lm and 44 lm/w, respectively. the relationship of the luminous flux and the luminous efficacy of the white light with an injection current were discussed. based on the evaluation method for luminous efficacy of light sources established by the commission international de i'eclairage (cie) and the phosphor used in this experiment, a theoretical analysis of the experiment results and the maximum luminous efficacy of this white light fabrication method were also presented.
学科主题光电子学
收录类别SCI
资助信息national
语种英语
公开日期2010-03-08
源URL[http://ir.semi.ac.cn/handle/172111/7527]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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Xu Y,Hu H,Chen L,et al. Analysis on the high luminous flux white light from GaN-based laser diode[J]. applied physics b-lasers and optics,2010,98(1):83-86.
APA Xu Y,Hu H,Chen L,Song G,&Zhuang W.(2010).Analysis on the high luminous flux white light from GaN-based laser diode.applied physics b-lasers and optics,98(1),83-86.
MLA Xu Y,et al."Analysis on the high luminous flux white light from GaN-based laser diode".applied physics b-lasers and optics 98.1(2010):83-86.

入库方式: OAI收割

来源:半导体研究所

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