Low-temperature magnetotransport behaviors of heavily Mn-doped (Ga,Mn)As films with high ferromagnetic transition temperature
文献类型：期刊论文
| 作者 | Chen L ; Qian X
|
| 刊名 | applied physics letters
 |
| 出版日期 | 2009 |
| 卷号 | 95期号:18页码:art.no.182505 |
| 关键词 | annealing |
| ISSN号 | 0003-6951 |
| 通讯作者 | zhao, jh, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. 电子邮箱地址: jhzhao@red.semi.ac.cn |
| 中文摘要 | we report the low-temperature magnetotransport behaviors of (ga,mn)as films with the nominal mn concentration x larger than 10%. the ferromagnetic transition temperature t-c can be enhanced to 191 k after postgrowth annealing (ga,mn)as with x=20%. the temperature t-m, corresponding to the resistivity minimum in the curve of resistivity versus temperature at temperature below t-c, depends on mn concentration, annealing condition, and magnetic field. moreover, we find that the variable-range hopping may be the main conductive mechanism when temperature is lower than t-m. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation of china 60836002 10674130major state basic research of china 2007cb924903 chinese academy of sciences kjcx2.yw.w09-1 |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7531]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen L,Qian X. Low-temperature magnetotransport behaviors of heavily Mn-doped (Ga,Mn)As films with high ferromagnetic transition temperature[J]. applied physics letters,2009,95(18):art.no.182505. |
| APA | Chen L,&Qian X.(2009).Low-temperature magnetotransport behaviors of heavily Mn-doped (Ga,Mn)As films with high ferromagnetic transition temperature.applied physics letters,95(18),art.no.182505. |
| MLA | Chen L,et al."Low-temperature magnetotransport behaviors of heavily Mn-doped (Ga,Mn)As films with high ferromagnetic transition temperature".applied physics letters 95.18(2009):art.no.182505. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。