Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector
文献类型：期刊论文
| 作者 | Zhang S (Zhang Shuang) ; Zhao DG (Zhao De-Gang) ; Liu ZS (Liu Zong-Shun) ; Zhu JJ (Zhu Jian-Jun) ; Zhang SM (Zhang Shu-Ming) ; Wang YT (Wang Yu-Tian) ; Duan LH (Duan Li-Hong) ; Liu WB (Liu Wen-Bao) ; Jiang DS (Jiang De-Sheng) ; Yang H (Yang Hui) |
| 刊名 | acta physica sinica
 |
| 出版日期 | 2009 |
| 卷号 | 58期号:11页码:7952-7957 |
| 关键词 | GaN |
| ISSN号 | 1000-3290 |
| 通讯作者 | zhao, dg, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. 电子邮箱地址: dgzhao@red.semi.ac.cn |
| 中文摘要 | the leakage mechanism of gan-based p-i-n (p-algan/i-gan/n-gan) uv detector has been investigated. with the same dislocation density, devices made from material with higher density of v-pits on surface produce larger leakage current. sem images show that some v-pits penetrate into i-gan layer, sometimes even the n-gan layer. if p-ohmic contact metal (ni/au) deposits in the v-pits, schottky contact would be formed at the interface of metal and i-gan, or form ohmic contact at the interface of metal and n-gan. the existence of parallel schottky junction and ohmic contact resistance enhances the leakage current greatly. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation of china 60776047 60506001604760216057600360836003project supported by the national natural science foundation of china (grant nos. 60776047, 60506001, 60476021, 60576003, 60836003). |
| 语种 | 中文 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7533]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang S ,Zhao DG ,Liu ZS ,et al. Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector[J]. acta physica sinica,2009,58(11):7952-7957. |
| APA | Zhang S .,Zhao DG .,Liu ZS .,Zhu JJ .,Zhang SM .,...&Yang H .(2009).Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector.acta physica sinica,58(11),7952-7957. |
| MLA | Zhang S ,et al."Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector".acta physica sinica 58.11(2009):7952-7957. |
入库方式： OAI收割
来源：半导体研究所
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