Solid source MBE growth of quantum cascade lasers
文献类型:期刊论文
作者 | Liu FQ (Liu Feng-Qi) ; Li L (Li Lu) ; Wang LJ (Wang Lijun) ; Liu JQ (Liu Junqi) ; Zhang W (Zhang Wei) ; Zhang QD (Zhang Quande) ; Liu WF (Liu Wanfeng) ; Lu QY (Lu Quanyong) ; Wang ZG (Wang Zhanguo) |
刊名 | applied physics a-materials science & processing
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出版日期 | 2009 |
卷号 | 97期号:3页码:527-532 |
关键词 | CONTINUOUS-WAVE OPERATION |
ISSN号 | 0947-8396 |
通讯作者 | liu, fq, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: fqliu@red.semi.ac.cn |
中文摘要 | high material quality is the basis of quantum cascade lasers (qcls). here we report the solid source molecular beam epitaxy (mbe) growth details of realizing high quality of ingaas/inalas qcl structures. accurate control of material compositions, layer thickness, doping profile, and interface smoothness can be realized by optimizing the growth conditions. double crystal x-ray diffraction discloses that our grown qcl structures possess excellent periodicity and sharp interfaces. high quality laser wafers are grown in a single epitaxial run. room temperature continuous-wave (cw) operation of qcls is demonstrated. |
学科主题 | 半导体材料 |
收录类别 | SCI |
资助信息 | national science fund for distinguished young scholars and other research projects of china 60525406 607360312006cb604903 2007aa03z446 60806018 |
语种 | 英语 |
公开日期 | 2010-03-08 |
源URL | [http://ir.semi.ac.cn/handle/172111/7543] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Liu FQ ,Li L ,Wang LJ ,et al. Solid source MBE growth of quantum cascade lasers[J]. applied physics a-materials science & processing,2009,97(3):527-532. |
APA | Liu FQ .,Li L .,Wang LJ .,Liu JQ .,Zhang W .,...&Wang ZG .(2009).Solid source MBE growth of quantum cascade lasers.applied physics a-materials science & processing,97(3),527-532. |
MLA | Liu FQ ,et al."Solid source MBE growth of quantum cascade lasers".applied physics a-materials science & processing 97.3(2009):527-532. |
入库方式: OAI收割
来源:半导体研究所
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