中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Symmetry and optical transition rule for low-dimensional semiconductor system with spin-orbit interaction and magnetic field

文献类型:期刊论文

作者Zhu ZY (Zhu, Zheng-Yong) ; Li SS (Li, Shu-Shen)
刊名superlattices and microstructures
出版日期2009
卷号46期号:4页码:627-636
关键词Spin-orbit interaction
ISSN号0749-6036
通讯作者zhu, zy, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. 电子邮箱地址: zyzhu@semi.ac.cn
中文摘要starting from effective mass hamiltonian, we systematically investigate the symmetry of low-dimensional structures with spin-orbit interaction and transverse magnetic field. the position-dependent potentials are assumed to be space symmetric, which is ever-present in theory and experiment research. by group theory, we analyze degeneracy in different cases. spin-orbit interaction makes the transition between zeeman sub-levels possible, which is originally forbidden within dipole approximation. however, a transition rule given in this paper for the first time shows that the transition between some levels is forbidden for space symmetric potentials. (c) 2009 elsevier ltd. all rights reserved.
学科主题半导体物理
收录类别SCI
资助信息national basic research program of china g2009cb929300 national natural science foundation of china 60521001 60776061
语种英语
公开日期2010-03-08
源URL[http://ir.semi.ac.cn/handle/172111/7545]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Zhu ZY ,Li SS . Symmetry and optical transition rule for low-dimensional semiconductor system with spin-orbit interaction and magnetic field[J]. superlattices and microstructures,2009,46(4):627-636.
APA Zhu ZY ,&Li SS .(2009).Symmetry and optical transition rule for low-dimensional semiconductor system with spin-orbit interaction and magnetic field.superlattices and microstructures,46(4),627-636.
MLA Zhu ZY ,et al."Symmetry and optical transition rule for low-dimensional semiconductor system with spin-orbit interaction and magnetic field".superlattices and microstructures 46.4(2009):627-636.

入库方式: OAI收割

来源:半导体研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。