Stone-Wales defects created by low energy recoils in single-walled silicon carbide nanotubes
文献类型：期刊论文
| 作者 | Wang ZG (Wang Zhiguo) ; Gao F (Gao Fei) ; Li JB (Li Jingbo) ; Zu XT (Zu Xiaotao) ; Weber WJ (Weber William J.) |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2009 |
| 卷号 | 106期号:8页码:art.no.084305 |
| 关键词 | BETA-SIC NANORODS |
| ISSN号 | 0021-8979 |
| 通讯作者 | wang, zg, univ elect sci & technol china, dept appl phys, chengdu 610054, peoples r china. 电子邮箱地址: zgwang@uestc.edu.cn ; fei.gao@pnl.gov ; jbli@semi.ac.cn |
| 中文摘要 | the defect creation at low energy events was studied using density functional theory molecular dynamics simulations in silicon carbide nanotubes, and the displacement threshold energies determined exhibit a dependence on sizes, which decrease with decreasing diameter of the nanotubes. the stone-wales (sw) defect, which is a common defect configurations induced through irradiation in nanotubes, has also been investigated, and the formation energies of the sw defects increase with increasing diameter of the nanotubes. the mean threshold energies were found to be 23 and 18 ev for si and c in armchair (5,5) nanotubes. (c) 2009 american institute of physics. [doi: 10.1063/1.3238307] |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation of china 10704014 sichuan young scientists foundation 09zq026029 phd funding support program of education ministry of china 20090450052 |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7553]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang ZG ,Gao F ,Li JB ,et al. Stone-Wales defects created by low energy recoils in single-walled silicon carbide nanotubes[J]. journal of applied physics,2009,106(8):art.no.084305. |
| APA | Wang ZG ,Gao F ,Li JB ,Zu XT ,&Weber WJ .(2009).Stone-Wales defects created by low energy recoils in single-walled silicon carbide nanotubes.journal of applied physics,106(8),art.no.084305. |
| MLA | Wang ZG ,et al."Stone-Wales defects created by low energy recoils in single-walled silicon carbide nanotubes".journal of applied physics 106.8(2009):art.no.084305. |
入库方式： OAI收割
来源：半导体研究所
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