Spin Relaxation of Electrons in Single InAs Quantum Dots
文献类型：期刊论文
| 作者 | Ma SS (Ma Shan-Shan) ; Dou XM (Dou Xiu-Ming) ; Chang XY (Chang Xiu-Ying) ; Sun BQ (Sun Bao-Quan) ; Xiong YH (Xiong Yong-Hua) ; Niu ZC (Niu Zhi-Chuan) ; Ni HQ (Ni Hai-Qiao) |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2009 |
| 卷号 | 26期号:11页码:art.no.117201 |
| ISSN号 | 0256-307x |
| 通讯作者 | ma, ss, chinese acad sci, inst semicond, sklsm, pob 912, beijing 100083, peoples r china. 电子邮箱地址: bqsun@semi.ac.cn |
| 中文摘要 | by using polarization-resolved photoluminescence spectra, we study the electron spin relaxation in single inas quantum dots (qds) with the configuration of positively charged excitons x+ (one electron, two holes). the spin relaxation rate of the hot electrons increases with the increasing energy of exciting photons. for electrons localized in qds the spin relaxation is induced by hyperfine interaction with the nuclei. a rapid decrease of polarization degree with increasing temperature suggests that the spin relaxation mechanisms are mainly changed from the hyperfine interaction with nuclei into an electron-hole exchange interaction. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7557]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ma SS ,Dou XM ,Chang XY ,et al. Spin Relaxation of Electrons in Single InAs Quantum Dots[J]. chinese physics letters,2009,26(11):art.no.117201. |
| APA | Ma SS .,Dou XM .,Chang XY .,Sun BQ .,Xiong YH .,...&Ni HQ .(2009).Spin Relaxation of Electrons in Single InAs Quantum Dots.chinese physics letters,26(11),art.no.117201. |
| MLA | Ma SS ,et al."Spin Relaxation of Electrons in Single InAs Quantum Dots".chinese physics letters 26.11(2009):art.no.117201. |
入库方式： OAI收割
来源：半导体研究所
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