Structure and Electronic Properties of Saturated and Unsaturated Gallium Nitride Nanotubes
文献类型：期刊论文
| 作者 | Wang ZG (Wang Zhiguo) ; Wang SJ (Wang Shengjie) ; Li JB (Li Jingbo) ; Gao F (Gao Fei) ; Weber WJ (Weber William J.) |
| 刊名 | journal of physical chemistry c
 |
| 出版日期 | 2009 |
| 卷号 | 113期号:44页码:19281-19285 |
| 关键词 | DENSITY-FUNCTIONAL CALCULATIONS |
| ISSN号 | 1932-7447 |
| 通讯作者 | wang, zg, univ elect sci & technol china, dept appl phys, chengdu 610054, peoples r china. |
| 中文摘要 | the atomic and electronic structures of saturated and unsaturated gan nanotubes along the [001] direction with (100) lateral facets are studied using first-principles calculations. atomic relaxation of nanotubes shows that appreciable distortion occurs in the unsaturated nanotubes. all the nanotubes considered, including saturated and unsaturated ones, exhibit semiconducting, with a direct band gap surface states arisen from the 3-fold-coordinated n and ga atoms at the lateral facets exist inside the bulklike band gap. when the nanotubes are saturated with hydrogen, these dangling bond bands are removed from the band gap, but the band gap decreases with increasing the wall thickness of the nanotubes. |
| 学科主题 | 半导体化学 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation of china 10704014 young scientists foundation of sichuan 09zq026-029 uestc jx0731 chinese academy of sciences u.s. department of energy de-ac05-76rl-01830 z. wang was financially supported by the national natural science foundation of china (10704014) and the young scientists foundation of sichuan (09zq026-029) and uestc (jx0731). j. li gratefully acknowledges financial support from the |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7563]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang ZG ,Wang SJ ,Li JB ,et al. Structure and Electronic Properties of Saturated and Unsaturated Gallium Nitride Nanotubes[J]. journal of physical chemistry c,2009,113(44):19281-19285. |
| APA | Wang ZG ,Wang SJ ,Li JB ,Gao F ,&Weber WJ .(2009).Structure and Electronic Properties of Saturated and Unsaturated Gallium Nitride Nanotubes.journal of physical chemistry c,113(44),19281-19285. |
| MLA | Wang ZG ,et al."Structure and Electronic Properties of Saturated and Unsaturated Gallium Nitride Nanotubes".journal of physical chemistry c 113.44(2009):19281-19285. |
入库方式： OAI收割
来源：半导体研究所
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