A wide-narrow well design for understanding the efficiency droop in InGaN/GaN light-emitting diodes
文献类型：期刊论文
| 作者 | Ding K (Ding, K.) ; Zeng YP (Zeng, Y. P.) ; Wei XC (Wei, X. C.) ; Li ZC (Li, Z. C.) ; Wang JX (Wang, J. X.) ; Lu HX (Lu, H. X.) ; Cong PP (Cong, P. P.) ; Yi XY (Yi, X. Y.) ; Wang GH (Wang, G. H.) ; Li JM (Li, J. M.) |
| 刊名 | applied physics b-lasers and optics
 |
| 出版日期 | 2009 |
| 卷号 | 97期号:2页码:465-468 |
| ISSN号 | 0946-2171 |
| 通讯作者 | ding, k, chinese acad sci, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: dingkai@red.semi.ac.cn |
| 中文摘要 | the electroluminescence efficiency at room temperature and low temperature (15 k) in a wide-narrow-well ingan/gan light-emitting diode with a narrow last well (1.5 nm) and a narrow next-to-last barrier (5 nm) is investigated to study the efficiency droop phenomenon. a reduced droop in the wide wells and a reduced droop at low temperatures reveals that inferior hole transportation ability induced auger recombination is the root for the droop at high excitation levels. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7573]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ding K ,Zeng YP ,Wei XC ,et al. A wide-narrow well design for understanding the efficiency droop in InGaN/GaN light-emitting diodes[J]. applied physics b-lasers and optics,2009,97(2):465-468. |
| APA | Ding K .,Zeng YP .,Wei XC .,Li ZC .,Wang JX .,...&Li JM .(2009).A wide-narrow well design for understanding the efficiency droop in InGaN/GaN light-emitting diodes.applied physics b-lasers and optics,97(2),465-468. |
| MLA | Ding K ,et al."A wide-narrow well design for understanding the efficiency droop in InGaN/GaN light-emitting diodes".applied physics b-lasers and optics 97.2(2009):465-468. |
入库方式： OAI收割
来源：半导体研究所
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