Photoluminescence of Charged Low-Density InAs/GaAs Quantum Dots
文献类型：期刊论文
| 作者 | Wang HL (Wang Hai-Li) ; Xiong YH (Xiong Yong-Hua) ; Huang SS (Huang She-Song) ; Ni HQ (Ni Hai-Qiao) ; He ZH (He Zhen-Hong) ; Dou XM (Dou Xiu-Ming) ; Niu ZC (Niu Zhi-Chuan) |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2009 |
| 卷号 | 26期号:10页码:art.no.107801 |
| 关键词 | 1.3 MU-M |
| ISSN号 | 0256-307x |
| 通讯作者 | wang, hl, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. 电子邮箱地址: zcniu@red.semi.ac.cn |
| 中文摘要 | we obtain low-density charged inas quantum dots with an emission wavelength below 1 mu m using a low inas growth rate. the quantum dots have a bimodal size distribution with an emission wavelength of around 1340 nm and 1000 nm, respectively. we observe the photoluminescence of the singly charged exciton in the modulation doped quantum dots in 77 k. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation of china 60625405 10734060national basic research program of china 2006cb921504 supported by the national natural science foundation of china under grant nos 60625405 and 10734060, and the national basic research program of china under grant no 2006cb921504. |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7595]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang HL ,Xiong YH ,Huang SS ,et al. Photoluminescence of Charged Low-Density InAs/GaAs Quantum Dots[J]. chinese physics letters,2009,26(10):art.no.107801. |
| APA | Wang HL .,Xiong YH .,Huang SS .,Ni HQ .,He ZH .,...&Niu ZC .(2009).Photoluminescence of Charged Low-Density InAs/GaAs Quantum Dots.chinese physics letters,26(10),art.no.107801. |
| MLA | Wang HL ,et al."Photoluminescence of Charged Low-Density InAs/GaAs Quantum Dots".chinese physics letters 26.10(2009):art.no.107801. |
入库方式： OAI收割
来源：半导体研究所
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