Time-Resolved Photoluminescence of Metamorphic InGaAs Quantum Wells
文献类型：期刊论文
| 作者 | Ma SS (Ma Shan-Shan) ; Wang, BR (Wang Bao-Rui) ; Sun BQ (Sun Bao-Quan) ; Wu DH (Wu Dong-Hai) ; Ni HQ (Ni Hai-Qiao) ; Niu ZC (Niu Zhi-Chuan) |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2009 |
| 卷号 | 26期号:10页码:art.no.107803 |
| 关键词 | MOLECULAR-BEAM EPITAXY |
| ISSN号 | 0256-307x |
| 通讯作者 | ma, ss, chinese acad sci, sklsm, inst semicond, pob 912, beijing 100083, peoples r china. 电子邮箱地址: bqsun@semi.ac.cn |
| 中文摘要 | we investigate the temperature dependence of photoluminescence (pl) and time-resolved pl on the metamorphic ingaas quantum wells (qws) with an emission wavelength of 1.55 mu m at room temperature. time-resolved pl measurements reveal that the optical properties can be partly improved by introducing antimony (sb) as a surfactant during the sample growth. the temperature dependence of the radiative lifetime is measured, showing that for qws grown with sb assistance, the intrinsic exciton emission is dominated when the temperature is below 60 k, while the nonradiative process becomes activated with further increases in temperature. however, without sb assistance, the nonradiative centers are activated when the temperature is higher than 20 k. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation of china 60676054 supported by the national natural science foundation of china under grant no 60676054. |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7597]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ma SS ,Wang, BR ,Sun BQ ,et al. Time-Resolved Photoluminescence of Metamorphic InGaAs Quantum Wells[J]. chinese physics letters,2009,26(10):art.no.107803. |
| APA | Ma SS ,Wang, BR ,Sun BQ ,Wu DH ,Ni HQ ,&Niu ZC .(2009).Time-Resolved Photoluminescence of Metamorphic InGaAs Quantum Wells.chinese physics letters,26(10),art.no.107803. |
| MLA | Ma SS ,et al."Time-Resolved Photoluminescence of Metamorphic InGaAs Quantum Wells".chinese physics letters 26.10(2009):art.no.107803. |
入库方式： OAI收割
来源：半导体研究所
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