The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates
文献类型：期刊论文
| 作者 | Wu YX (Wu Yu-Xin) ; Zhu JJ (Zhu Jian-Jun) ; Zhao DG (Zhao De-Gang) ; Liu ZS (Liu Zong-Shun) ; Jiang DS (Jiang De-Sheng) ; Zhang SM (Zhang Shu-Ming) ; Wang YT (Wang Yu-Tian) ; Wang H (Wang Hui) ; Chen GF (Chen Gui-Feng) ; Yang H (Yang Hui) |
| 刊名 | chinese physics b
 |
| 出版日期 | 2009 |
| 卷号 | 18期号:10页码:4413-4417 |
| 关键词 | GaN |
| ISSN号 | 1674-1056 |
| 通讯作者 | zhu, jj, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. 电子邮箱地址: jjzhu@red.semi.ac.cn |
| 中文摘要 | high-quality and nearly crack-free gan epitaxial layer was obtained by inserting a single algan interlayer between gan epilayer and high-temperature aln buffer layer on si (111) substrate by metalorganic chemical vapor deposition. this paper investigates the effect of algan interlayer on the structural proper-ties of the resulting gan epilayer. it confirms from the optical microscopy and raman scattering spectroscopy that the algan interlayer has a remarkable effect on introducing relative compressive strain to the top gan layer and preventing the formation of cracks. x-ray diffraction and transmission electron microscopy analysis reveal that a significant reduction in both screw and edge threading dislocations is achieved in gan epilayer by the insertion of algan interlayer. the process of threading dislocation reduction in both algan interlayer and gan epilayer is demonstrated. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation of china 60506001 60476021605760036077604760836003national basic research program of china 2007cb936700 technological research and development of hebei province 07215134 |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7599]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wu YX ,Zhu JJ ,Zhao DG ,et al. The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates[J]. chinese physics b,2009,18(10):4413-4417. |
| APA | Wu YX .,Zhu JJ .,Zhao DG .,Liu ZS .,Jiang DS .,...&Yang H .(2009).The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates.chinese physics b,18(10),4413-4417. |
| MLA | Wu YX ,et al."The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates".chinese physics b 18.10(2009):4413-4417. |
入库方式： OAI收割
来源：半导体研究所
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