Size self-scaling effect in stacked InAs/InAlAs nanowire multilayers
文献类型：期刊论文
| 作者 | Sun ZZ ; Yoon SF ; Wu J ; Wang ZG |
| 刊名 | applied physics letters
 |
| 出版日期 | 2004 |
| 卷号 | 85期号:21页码:5061-5063 |
| 关键词 | INAS QUANTUM WIRES |
| ISSN号 | 0003-6951 |
| 通讯作者 | yoon, sf, nanyang technol univ, sch elect & elect engn, nanyang ave, singapore 639798, singapore. 电子邮箱地址: esfyoon@ntu.edu.sg |
| 中文摘要 | size self-scaling effect in stacked inas/in0.52al0.48as nanowires on inp substrates is revealed, i.e., the base width and height of the inas nanowires have clear proportional dependence on thickness of the inalas spacer layer used in different samples. the photoluminescence wavelength from different samples, which varies between 1.3 and 1.9 mum, is also found closely correlated to the size self-scaling effect. this phenomenon can be well explained in the context of formation mechanism and growth features of the inas/inalas nanowire arrays. the finding illustrates a degree of freedom to control the structural and optical properties of strained self-organized nanostructures. (c) 2004 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-09 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7898]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Sun ZZ,Yoon SF,Wu J,et al. Size self-scaling effect in stacked InAs/InAlAs nanowire multilayers[J]. applied physics letters,2004,85(21):5061-5063. |
| APA | Sun ZZ,Yoon SF,Wu J,&Wang ZG.(2004).Size self-scaling effect in stacked InAs/InAlAs nanowire multilayers.applied physics letters,85(21),5061-5063. |
| MLA | Sun ZZ,et al."Size self-scaling effect in stacked InAs/InAlAs nanowire multilayers".applied physics letters 85.21(2004):5061-5063. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。