Gallium antisite defect and residual acceptors in undoped GaSb
文献类型：期刊论文
| 作者 | Hu WG ; Wang Z ; Su BF ; Dai YQ ; Wang SJ ; Zhao YW |
| 刊名 | physics letters a
 |
| 出版日期 | 2004 |
| 卷号 | 332期号:3-4页码:286-290 |
| 关键词 | GaSb |
| ISSN号 | 0375-9601 |
| 通讯作者 | wang, z, wuhan univ, dept phys, wuhan 430072, peoples r china. 电子邮箱地址: wangz@whu.edu.cn |
| 中文摘要 | undoped ga-sb samples were investigated by positron lifetime spectroscopy (pas) and the coincident doppler broadening (cdb) technique. pas measurement indicated that there were monovacancy-type defects in undoped ga-sb samples, which were identified to be predominantly ca vacancy (v-ga) related defects by combining the cdb measurements. after annealing of these samples at 520 c, positron shallow trapping have been observed and should be due to ga-sb defects. undoped ga-sb is intrinsically p-type having a residual carrier density of 10(16)-10(17) cm(-3). and the ga-sb antisite defects are stable in the (0), (1-) and (2-) charge states and act as a double acceptor. thus, we infer that ga-sb antisite defects are the acceptor contributing to the p-type conduction for undoped samples. (c) 2004 elsevier b.v all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-09 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7900]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Hu WG,Wang Z,Su BF,et al. Gallium antisite defect and residual acceptors in undoped GaSb[J]. physics letters a,2004,332(3-4):286-290. |
| APA | Hu WG,Wang Z,Su BF,Dai YQ,Wang SJ,&Zhao YW.(2004).Gallium antisite defect and residual acceptors in undoped GaSb.physics letters a,332(3-4),286-290. |
| MLA | Hu WG,et al."Gallium antisite defect and residual acceptors in undoped GaSb".physics letters a 332.3-4(2004):286-290. |
入库方式： OAI收割
来源：半导体研究所
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