Space growth studies of Ce-doped Bi12SiO20 single crystal
文献类型：期刊论文
| 作者 | Zhou YF ; Wang JC ; Tang LA ; Pan ZL ; Chen NF ; Chen WC ; Huang YY ; He W |
| 刊名 | materials science and engineering b-solid state materials for advanced technology
 |
| 出版日期 | 2004 |
| 卷号 | 113期号:3页码:179-183 |
| 关键词 | Bridgman technique |
| ISSN号 | 0921-5107 |
| 通讯作者 | zhou, yf, chinese acad sci, shanghai inst ceram, 1295 dingxi rd, shanghai 200050, peoples r china. 电子邮箱地址: yfzhou@sunm.shcnc.ac.cn |
| 中文摘要 | ce-doped bi12sio20 (bso) single crystal was grown on board of the chinese spacecraft-shenzhou no. 3. a cylindrical crystal, 10 mm in diameter and 40 mm in length, was obtained. the morphology of crystals is significantly different for ground- and space-grown portions. the space- and ground-grown crystals have been characterized by cc concentration distribution, x-ray rocking curve absorption spectrum and micro-raman spectrum. the results show that the quality of ce-doped bso crystal grown in space is more homogeneous and more perfect than that of ground grown one. (c) 2004 published by elsevier b.v. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-09 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7902]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhou YF,Wang JC,Tang LA,et al. Space growth studies of Ce-doped Bi12SiO20 single crystal[J]. materials science and engineering b-solid state materials for advanced technology,2004,113(3):179-183. |
| APA | Zhou YF.,Wang JC.,Tang LA.,Pan ZL.,Chen NF.,...&He W.(2004).Space growth studies of Ce-doped Bi12SiO20 single crystal.materials science and engineering b-solid state materials for advanced technology,113(3),179-183. |
| MLA | Zhou YF,et al."Space growth studies of Ce-doped Bi12SiO20 single crystal".materials science and engineering b-solid state materials for advanced technology 113.3(2004):179-183. |
入库方式： OAI收割
来源：半导体研究所
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