Magneto - Transport of electron symmetric and antisymmrtric states in highly doped InGaAs/InAlAs single quantum well
文献类型：期刊论文
| 作者 | Qiu ZJ ; Gui YS ; Cui LJ ; Zeng YP ; Huang ZM ; Shu XZ ; Dai N ; Guo SL ; Chu JH |
| 刊名 | journal of infrared and millimeter waves
 |
| 出版日期 | 2004 |
| 卷号 | 23期号:5页码:329-332 |
| 关键词 | InGaAs/InAlAs quantum well |
| ISSN号 | 1001-9014 |
| 通讯作者 | qiu, zj, chinese acad sci, shanghai inst tech phys, natl lab infrared phys, shanghai 200083, peoples r china. |
| 中文摘要 | beating patterns in longitudinal resistance caused by the symmetric and antisymmetric states were observed in a heavily doped ingaas/inalas quantum well by using variable temperature hall measurement. the energy gap of symmetric and antisymmetric states is estimated to be 4mev from the analysis of beating node positions. in addition, the temperature dependences of the subband electron mobility and concentration were also studied from the mobility spectrum and multicarrier fitting procedure. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-09 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7920]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Qiu ZJ,Gui YS,Cui LJ,et al. Magneto - Transport of electron symmetric and antisymmrtric states in highly doped InGaAs/InAlAs single quantum well[J]. journal of infrared and millimeter waves,2004,23(5):329-332. |
| APA | Qiu ZJ.,Gui YS.,Cui LJ.,Zeng YP.,Huang ZM.,...&Chu JH.(2004).Magneto - Transport of electron symmetric and antisymmrtric states in highly doped InGaAs/InAlAs single quantum well.journal of infrared and millimeter waves,23(5),329-332. |
| MLA | Qiu ZJ,et al."Magneto - Transport of electron symmetric and antisymmrtric states in highly doped InGaAs/InAlAs single quantum well".journal of infrared and millimeter waves 23.5(2004):329-332. |
入库方式： OAI收割
来源：半导体研究所
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