Single-electron multiple-valued memory using ultra-small floating gate metal-oxide-semiconductor field effect transistor
文献类型：期刊论文
| 作者 | Ou XB ; Wu NJ |
| 刊名 | japanese journal of applied physics part 2-letters & express letters
 |
| 出版日期 | 2004 |
| 卷号 | 43期号:10b页码:l1359-l1361 |
| 关键词 | single-electron |
| ISSN号 | 0021-4922 |
| 通讯作者 | ou, xb, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. |
| 中文摘要 | this paper proposes a novel single-electron multiple-valued memory. it is a metal-oxide-semiconductor field effect transistor (mos)-type memory with multiple separate control gates and floating gate layer, which consists of nano-crystal grains. the electron can tunnel among the grains (floating gates) and between the floating gate layer and the mos channel. the memory can realize operations of 'write', 'store' and 'erase' of multiple-valued signals exceeding three values by controlling the single electron tunneling behavior. we use monte carlo method to simulate the operation of single-electron four-valued memory. the simulation results show that it can operate well at room temperature. |
| 学科主题 | 微电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-09 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7922]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ou XB,Wu NJ. Single-electron multiple-valued memory using ultra-small floating gate metal-oxide-semiconductor field effect transistor[J]. japanese journal of applied physics part 2-letters & express letters,2004,43(10b):l1359-l1361. |
| APA | Ou XB,&Wu NJ.(2004).Single-electron multiple-valued memory using ultra-small floating gate metal-oxide-semiconductor field effect transistor.japanese journal of applied physics part 2-letters & express letters,43(10b),l1359-l1361. |
| MLA | Ou XB,et al."Single-electron multiple-valued memory using ultra-small floating gate metal-oxide-semiconductor field effect transistor".japanese journal of applied physics part 2-letters & express letters 43.10b(2004):l1359-l1361. |
入库方式： OAI收割
来源：半导体研究所
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