Raman scattering and photoluminescence studies of Er-implanted and Er+ O coimplanted GaN
文献类型：期刊论文
| 作者 | Song SF ; Chen WD ; Zhang CG ; Bian LF ; Hsu CC ; Ma BS ; Li GH ; Zhu JJ |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2004 |
| 卷号 | 96期号:9页码:4930-4934 |
| 关键词 | DOPED GAN |
| ISSN号 | 0021-8979 |
| 通讯作者 | song, sf, chinese acad sci, inst semicond, state key lab surface phys, pob 912, beijing 100083, peoples r china. 电子邮箱地址: sfsong@red.semi.ac.cn |
| 中文摘要 | raman measurements and photoluminescence (pl) were performed on the metal-organic chemical-vapor deposition epitaxially grown gan before and after the implantation with er and er+o. several raman defect modes have emerged from the implantation-damaged samples. the structures around 300 and 595 cm(-1) modes are attributed to the disorder-activated raman scattering, whereas the 670 cm(-1) peak is assigned to nitrogen-vacancy-related defect scattering. one additional peak at 360 cm(-1) arises after er+o coimplantation. this raman peak is attributed to the o-implantation-induced defect complex. the appearance of the 360 cm(-1) mode results in the decrease of the er3+ -related infrared pl intensity for the gan:er+o samples. (c) 2004 american institute of physics. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-09 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7928]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Song SF,Chen WD,Zhang CG,et al. Raman scattering and photoluminescence studies of Er-implanted and Er+ O coimplanted GaN[J]. journal of applied physics,2004,96(9):4930-4934. |
| APA | Song SF.,Chen WD.,Zhang CG.,Bian LF.,Hsu CC.,...&Zhu JJ.(2004).Raman scattering and photoluminescence studies of Er-implanted and Er+ O coimplanted GaN.journal of applied physics,96(9),4930-4934. |
| MLA | Song SF,et al."Raman scattering and photoluminescence studies of Er-implanted and Er+ O coimplanted GaN".journal of applied physics 96.9(2004):4930-4934. |
入库方式： OAI收割
来源：半导体研究所
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