Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy
文献类型：期刊论文
| 作者 | Ye, XL ; Chen, YH ; Xu, B ; Zeng, YP ; Wang, ZG |
| 刊名 | european physical journal-applied physics
 |
| 出版日期 | 2004 |
| 卷号 | 27期号:1-3页码:297-300 |
| 关键词 | SHORT-PERIOD SUPERLATTICES |
| ISSN号 | 1286-0042 |
| 通讯作者 | ye, xl, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: xlye@red.semi.ac.cn |
| 中文摘要 | the in-plane optical anisotropy of several gaas/algaas quantum well samples with different well widths has been measured at room temperature by reflectance-difference spectroscopy (rds). the rds line shapes are found to be similar in all the samples examined here, which dominantly consist of two peak-like signals corresponding to 1hh-->1e and 1lh-->1e transition. as the well width is decreased, or the 1 ml inas layer is inserted at one interface, the intensity of the anisotropy increases quickly. our detail analysis shows that the anisotropy mainly arises from the anisotropic interface roughness. the results demonstrate that the rds technique is sensitive to the interface structures. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-09 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7938]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ye, XL,Chen, YH,Xu, B,et al. Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy[J]. european physical journal-applied physics,2004,27(1-3):297-300. |
| APA | Ye, XL,Chen, YH,Xu, B,Zeng, YP,&Wang, ZG.(2004).Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy.european physical journal-applied physics,27(1-3),297-300. |
| MLA | Ye, XL,et al."Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy".european physical journal-applied physics 27.1-3(2004):297-300. |
入库方式： OAI收割
来源：半导体研究所
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