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Electronic transport through self-assembled quantum disks

文献类型:期刊论文

作者Chi, F ; Xiao, JL ; Li, SS
刊名superlattices and microstructures
出版日期2004
卷号35期号:1-2页码:59-65
关键词quantum disks
ISSN号0749-6036
通讯作者chi, f, chinese acad sci, state key lab superlattices & microstruct, inst semicond, pob 912, beijing 100083, peoples r china. 电子邮箱地址: chifeng@red.semi.ac.cn
中文摘要in this paper we study a single electron tunneling through a vertically stacked self-assembled quantum disks structure using a transfer matrix technique in the framework of effective mass approximation. in the disks, the electron is confined both laterally and vertically; we separate the motion in the vertical and lateral directions within the adiabatic approximation and treat the energy levels of the latter as an effective confining potential. the influence of a constant applied electric field is taken into account using an exact airy-function formalism and the current density is calculated at zero temperature. by increasing the widths of the barriers, we find the peaks of the current density shift toward lower voltage region; meanwhile, they can become even sharper. (c) 2004 elsevier ltd. all rights reserved.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-03-09
源URL[http://ir.semi.ac.cn/handle/172111/7980]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Chi, F,Xiao, JL,Li, SS. Electronic transport through self-assembled quantum disks[J]. superlattices and microstructures,2004,35(1-2):59-65.
APA Chi, F,Xiao, JL,&Li, SS.(2004).Electronic transport through self-assembled quantum disks.superlattices and microstructures,35(1-2),59-65.
MLA Chi, F,et al."Electronic transport through self-assembled quantum disks".superlattices and microstructures 35.1-2(2004):59-65.

入库方式: OAI收割

来源:半导体研究所

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