Indium mole fraction effect on the structural and optical properties of quaternary AlInGaN epilayers
文献类型：期刊论文
| 作者 | Liu, JP ; Jin, RQ ; Zhang, JC ; Wang, JF ; Wu, M ; Zhu, JJ ; Zhao, DG ; Wang, YT ; Yang, H |
| 刊名 | journal of physics d-applied physics
 |
| 出版日期 | 2004 |
| 卷号 | 37期号:15页码:2060-2063 |
| 关键词 | LIGHT-EMITTING-DIODES |
| ISSN号 | 0022-3727 |
| 通讯作者 | liu, jp, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. 电子邮箱地址: jpliu@red.semi.ac.cn |
| 中文摘要 | alingan quaternary epilayers with varying in mole fraction were investigated using triple-axis x-ray diffraction and photoluminescence measurements. the indium compositional fluctuation is enhanced with increasing in mole fraction, whereas the mosaicity of the alingan epilayers is determined through the gan template quality. based on the analysis of the temperature dependence of the pl peak position, it is found that the localization effect strengthens with increasing in mole fraction due to the larger fluctuations of the in distribution. increasing the influence of the localized state results in increasing the emission intensity and fwhm with the in content. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-09 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7982]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu, JP,Jin, RQ,Zhang, JC,et al. Indium mole fraction effect on the structural and optical properties of quaternary AlInGaN epilayers[J]. journal of physics d-applied physics,2004,37(15):2060-2063. |
| APA | Liu, JP.,Jin, RQ.,Zhang, JC.,Wang, JF.,Wu, M.,...&Yang, H.(2004).Indium mole fraction effect on the structural and optical properties of quaternary AlInGaN epilayers.journal of physics d-applied physics,37(15),2060-2063. |
| MLA | Liu, JP,et al."Indium mole fraction effect on the structural and optical properties of quaternary AlInGaN epilayers".journal of physics d-applied physics 37.15(2004):2060-2063. |
入库方式： OAI收割
来源：半导体研究所
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