Effect of the ratio of TMIn flow to group III flow on the properties of InGaN/GaN multiple quantum wells
文献类型：期刊论文
| 作者 | Zhang, JC ; Wang, JF ; Wang, YT ; Hui, Y |
| 刊名 | acta physica sinica
 |
| 出版日期 | 2004 |
| 卷号 | 53期号:8页码:2467-2471 |
| 关键词 | triple-axis x-ray diffraction |
| ISSN号 | 1000-3290 |
| 通讯作者 | zhang, jc, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. |
| 中文摘要 | triple-axis x-ray diffraction (txrd) and photoluminescence (pl) spectra are used to assess the influence of the ratio of tmin flow to group iii flow on structural defects, such as dislocations and interface roughness, and optical properties of multiple quantum wells(mqws). in this paper the mean densities of edge and screw dislocations in ingan/gan mqws are obtained by w scan of every satellite peak of (0002) symmetric and (1012) asymmetric diffractions. at the same time, the interface roughness is measured by the radio of the full width at half maximum of satellite peaks to the peak orders. the experimental results showed that the density of dislocation, especially of edge dislocation, and interface roughness increase with the increase of the ratio, which leads to the decrease of pl properties. it also can be concluded that the edge dislocation acts as nonradiative recombination centers in ingan/gan mqws. also noticed is that the variation of the ratio has more influence on edge dislocation than on screw dislocation. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-09 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7996]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang, JC,Wang, JF,Wang, YT,et al. Effect of the ratio of TMIn flow to group III flow on the properties of InGaN/GaN multiple quantum wells[J]. acta physica sinica,2004,53(8):2467-2471. |
| APA | Zhang, JC,Wang, JF,Wang, YT,&Hui, Y.(2004).Effect of the ratio of TMIn flow to group III flow on the properties of InGaN/GaN multiple quantum wells.acta physica sinica,53(8),2467-2471. |
| MLA | Zhang, JC,et al."Effect of the ratio of TMIn flow to group III flow on the properties of InGaN/GaN multiple quantum wells".acta physica sinica 53.8(2004):2467-2471. |
入库方式： OAI收割
来源：半导体研究所
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