中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
ac gate-induced Fano resonance and peak splitting of conductance in a quantum dot

文献类型:期刊论文

作者Yang M ; Li SS
刊名physical review b
出版日期2004
卷号70期号:4页码:art.no.045318
ISSN号1098-0121
关键词PHOTON SIDE-BAND
通讯作者li, ss, chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china. 电子邮箱地址: sslee@red.semi.ac.cn
中文摘要we have investigated the conductance of a quantum dot system suffering an anti-symmetric ac gate voltage which induces the transition between dot levels in the linear regime at zero temperature in the rotating wave approximation. interesting fano resonances appear on one side of the displaced resonant tunnelling peaks for the nonresonant case or the peak splitting for the resonant case. the line shape of conductance (vs fermi energy) near each level of the quantum dot can be decomposed into two profiles: a breit-wigner peak and a fano profile, or a breit-wigner peak and a dip in both cases.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-03-09
源URL[http://ir.semi.ac.cn/handle/172111/7998]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Yang M,Li SS. ac gate-induced Fano resonance and peak splitting of conductance in a quantum dot[J]. physical review b,2004,70(4):art.no.045318.
APA Yang M,&Li SS.(2004).ac gate-induced Fano resonance and peak splitting of conductance in a quantum dot.physical review b,70(4),art.no.045318.
MLA Yang M,et al."ac gate-induced Fano resonance and peak splitting of conductance in a quantum dot".physical review b 70.4(2004):art.no.045318.

入库方式: OAI收割

来源:半导体研究所

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