ac gate-induced Fano resonance and peak splitting of conductance in a quantum dot
文献类型:期刊论文
作者 | Yang M ; Li SS |
刊名 | physical review b |
出版日期 | 2004 |
卷号 | 70期号:4页码:art.no.045318 |
ISSN号 | 1098-0121 |
关键词 | PHOTON SIDE-BAND |
通讯作者 | li, ss, chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china. 电子邮箱地址: sslee@red.semi.ac.cn |
中文摘要 | we have investigated the conductance of a quantum dot system suffering an anti-symmetric ac gate voltage which induces the transition between dot levels in the linear regime at zero temperature in the rotating wave approximation. interesting fano resonances appear on one side of the displaced resonant tunnelling peaks for the nonresonant case or the peak splitting for the resonant case. the line shape of conductance (vs fermi energy) near each level of the quantum dot can be decomposed into two profiles: a breit-wigner peak and a fano profile, or a breit-wigner peak and a dip in both cases. |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-03-09 |
源URL | [http://ir.semi.ac.cn/handle/172111/7998] |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Yang M,Li SS. ac gate-induced Fano resonance and peak splitting of conductance in a quantum dot[J]. physical review b,2004,70(4):art.no.045318. |
APA | Yang M,&Li SS.(2004).ac gate-induced Fano resonance and peak splitting of conductance in a quantum dot.physical review b,70(4),art.no.045318. |
MLA | Yang M,et al."ac gate-induced Fano resonance and peak splitting of conductance in a quantum dot".physical review b 70.4(2004):art.no.045318. |
入库方式: OAI收割
来源:半导体研究所
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