Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures
文献类型：期刊论文
| 作者 | Chen, Z ; Chua, SJ ; Yuan, HR ; Liu, XL ; Lu, DC ; Han, PD ; Wang, ZG |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2004 |
| 卷号 | 268期号:3-4页码:504-508 |
| 关键词 | metalorganic chemical vapor deposition |
| ISSN号 | 0022-0248 |
| 通讯作者 | chen, z, singapore mit alliance, ammns, e4-04-10,nus,4 engn dr,3, singapore 117576, singapore. 电子邮箱地址: smacz@nus.edu.sg |
| 中文摘要 | photoluminescence (pl) and temperature-dependent hall effect measurements were carried out in (0001) and (11 (2) over bar0) algan/gan heterostructures grown on sapphire substrates by metalorganic chemical vapor deposition. there are strong spontaneous and piezoelectric electric fields (spf) along the growth orientation of the (0001) algan/gan heterostructures. at the same time there are no corresponding spf along that of the (1120) algan/gan. a strong pl peak related to the recombination between two-dimensional electron gas (2deg) and photoexcited holes was observed at 3.258 ev at room temperature in (0001) algan/gan heterointerfaces while no corresponding pl peak was observed in (11 (2) over bar0). the existence of a 2deg was observed in (0001) algan/gan multi-layers with a mobility saturated at 6000 cm(2)/v s below 80 k, whereas a much lower mobility was measured in (11 (2) over bar0). these results indicated that the spf was the main element to cause the high mobility and high sheet-electron-density 2deg in algan/gan heterostructures. (c) 2004 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-09 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8004]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen, Z,Chua, SJ,Yuan, HR,et al. Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures[J]. journal of crystal growth,2004,268(3-4):504-508. |
| APA | Chen, Z.,Chua, SJ.,Yuan, HR.,Liu, XL.,Lu, DC.,...&Wang, ZG.(2004).Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures.journal of crystal growth,268(3-4),504-508. |
| MLA | Chen, Z,et al."Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures".journal of crystal growth 268.3-4(2004):504-508. |
入库方式： OAI收割
来源：半导体研究所
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