Fabrication of 1.55-mu m Si-based resonant cavity enhanced photodetectors using sol-gel bonding
文献类型：期刊论文
| 作者 | Mao RW ; Li CB ; Zuo YH ; Cheng BW ; Teng XG ; Luo LP ; Yu JZ ; Wang QM |
| 刊名 | ieee photonics technology letters
 |
| 出版日期 | 2004 |
| 卷号 | 16期号:8页码:1930-1932 |
| 关键词 | bonding medium |
| ISSN号 | 1041-1135 |
| 通讯作者 | mao, rw, chinese acad sci, inst semicond, beijing 100083, peoples r china. 电子邮箱地址: maorongwei@red.semi.ac.cn |
| 中文摘要 | in this work, a novel bonding method using silicate gel as the bonding medium was developed to fabricate an ingaas narrow-band response resonant cavity enhanced photodetector on a silicon substrate. the bonding was performed at a low temperature of 350 degreesc without any special treatment on bonding surfaces and a si-based narrow-band response ingaas photodetector was successfully fabricated, with a quantum efficiency of 34.4% at the resonance wavelength of 1.54 mum, and a full-width at half-maximum of about 27 nm. the photodetector has a linear photoresponse up to 4-mw optical power under 1.5 v or higher reverse bias. the low temperature wafer bonding process demonstrates a great potential in device fabrication. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-09 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8010]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Mao RW,Li CB,Zuo YH,et al. Fabrication of 1.55-mu m Si-based resonant cavity enhanced photodetectors using sol-gel bonding[J]. ieee photonics technology letters,2004,16(8):1930-1932. |
| APA | Mao RW.,Li CB.,Zuo YH.,Cheng BW.,Teng XG.,...&Wang QM.(2004).Fabrication of 1.55-mu m Si-based resonant cavity enhanced photodetectors using sol-gel bonding.ieee photonics technology letters,16(8),1930-1932. |
| MLA | Mao RW,et al."Fabrication of 1.55-mu m Si-based resonant cavity enhanced photodetectors using sol-gel bonding".ieee photonics technology letters 16.8(2004):1930-1932. |
入库方式： OAI收割
来源：半导体研究所
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