Electron and hole states in diluted magnetic semiconductor quantum dots
文献类型：期刊论文
| 作者 | Chang K ; Li SS ; Xia JB ; Peeters FM |
| 刊名 | physical review b
 |
| 出版日期 | 2004 |
| 卷号 | 69期号:23页码:art.no.235203 |
| 关键词 | CAPACITANCE SPECTROSCOPY |
| ISSN号 | 1098-0121 |
| 通讯作者 | chang, k, chinese acad sci, inst semicond, nlsm, pob 912, beijing 100083, peoples r china. 电子邮箱地址: kchang@red.semi.ac.cn |
| 中文摘要 | the electronic structure of a diluted magnetic semiconductor (dms) quantum dot (qd) is studied within the framework of the effective-mass theory. we find that the energies of the electron with different spin orientation exhibit different behavior as a function of magnetic field at small magnetic fields. the energies of the hole decreases rapidly at low magnetic fields and saturate at higher magnetic field due to the sp-d exchange interaction between the carriers and the magnetic ions. the mixing effect of the hole states in the dms qd can be tuned by changing the external magnetic field. an interesting crossing behavior of the hole ground state between the heavy-hole state and the light-hole state is found with variation of the qd radius. the strength of the interband optical transition for different circular polarization exhibts quite different behavior with increasing magnetic field and qd radius. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-09 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8022]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chang K,Li SS,Xia JB,et al. Electron and hole states in diluted magnetic semiconductor quantum dots[J]. physical review b,2004,69(23):art.no.235203. |
| APA | Chang K,Li SS,Xia JB,&Peeters FM.(2004).Electron and hole states in diluted magnetic semiconductor quantum dots.physical review b,69(23),art.no.235203. |
| MLA | Chang K,et al."Electron and hole states in diluted magnetic semiconductor quantum dots".physical review b 69.23(2004):art.no.235203. |
入库方式： OAI收割
来源：半导体研究所
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