Photovoltaic effect in a photon storage cell
文献类型：期刊论文
| 作者 | Bian SB ; Li GR ; Yan T ; Bing H ; Li YX ; Yang FH ; Zheng HZ |
| 刊名 | journal of infrared and millimeter waves
 |
| 出版日期 | 2004 |
| 卷号 | 23期号:3页码:205-207 |
| 关键词 | photonic storage |
| ISSN号 | 1001-9014 |
| 通讯作者 | bian, sb, chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china. |
| 中文摘要 | the response of photonic memory effect in i-v characteristics of a specially designed photonic memory cell was reported. when the cell is biased in a storage mode, the optical excitation with the photon's energy larger than the energy gap gives rise to a step-like jump in the current. a set-up was used to measure the transient photocurrent at the biases where the step-like jump showed up. it is proved that the falling transient edge of the photocurrent, as the photoexcitation turns off, mainly maps the decaying of electrons and holes, which were previously stored in the cell during the illumination. its time constant is a measure of photonic memory time. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-09 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8040]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Bian SB,Li GR,Yan T,et al. Photovoltaic effect in a photon storage cell[J]. journal of infrared and millimeter waves,2004,23(3):205-207. |
| APA | Bian SB.,Li GR.,Yan T.,Bing H.,Li YX.,...&Zheng HZ.(2004).Photovoltaic effect in a photon storage cell.journal of infrared and millimeter waves,23(3),205-207. |
| MLA | Bian SB,et al."Photovoltaic effect in a photon storage cell".journal of infrared and millimeter waves 23.3(2004):205-207. |
入库方式： OAI收割
来源：半导体研究所
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