High-indium-content InxGa1-xAs/GaAs quantum wells with emission wavelengths above 1.25 mu m at room temperature
文献类型：期刊论文
| 作者 | Xu YQ
|
| 刊名 | applied physics letters
 |
| 出版日期 | 2004 |
| 卷号 | 84期号:25页码:5100-5102 |
| 关键词 | CRITICAL LAYER THICKNESS |
| ISSN号 | 0003-6951 |
| 通讯作者 | ni, hq, chinese acad sci, inst semicond, pob 912, beijing 100083, peoples r china. 电子邮箱地址: zcniu@red.semi.ac.cn |
| 中文摘要 | high-indium-content inxga1-xas/gaas single/multi-quantum well (sqw/mqw) structures have been systematically investigated. by optimizing the molecular-beam epitaxy growth conditions, the critical thickness of the strained in0.475ga0.525as/gaas qws is raised to 7 nm, which is much higher than the value given by the matthews and blakeslee model. the good crystalline quality of the strained ingaas/gaas mqws is proved by x-ray rocking curves. photoluminescence measurements show that an emission wavelength of 1.25 mum at room temperatures with narrower full width at half maximum less than 30 mev can be obtained. the strain relaxation mechanism is discussed using the matthews-blakeslee model. (c) 2004 american institute of physics. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-09 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8042]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu YQ. High-indium-content InxGa1-xAs/GaAs quantum wells with emission wavelengths above 1.25 mu m at room temperature[J]. applied physics letters,2004,84(25):5100-5102. |
| APA | Xu YQ.(2004).High-indium-content InxGa1-xAs/GaAs quantum wells with emission wavelengths above 1.25 mu m at room temperature.applied physics letters,84(25),5100-5102. |
| MLA | Xu YQ."High-indium-content InxGa1-xAs/GaAs quantum wells with emission wavelengths above 1.25 mu m at room temperature".applied physics letters 84.25(2004):5100-5102. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。