Investigations on V-defects in quaternary AlInGaN epilayers
文献类型：期刊论文
| 作者 | Yang H; Yang H; Wang YT ; Jiang DS
|
| 刊名 | applied physics letters
 |
| 出版日期 | 2004 |
| 卷号 | 84期号:26页码:5449-5451 |
| 关键词 | MULTIPLE-QUANTUM WELLS |
| ISSN号 | 0003-6951 |
| 通讯作者 | liu, jp, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. 电子邮箱地址: jpliu@red.semi.ac.cn |
| 中文摘要 | the characteristics of v-defects in quaternary alingan epilayers and their correlation with fluctuations of the in distribution are investigated. the geometric size of the v-defects is found to depend on the in composition of the alloy. the v-defects are nucleated within the alingan layer and associated with threading dislocations. line scan cathodoluminescence (cl) shows a redshift of the emission peak and an increase of the half width of the cl spectra as the electron beam approaches the apex of the v-defect. the total redshift decreases with decreasing in mole fraction in the alloy samples. although the strain reduction may partially contribute to the cl redshift, indium segregation is suggested to be responsible for the v-defect formation and has a main influence on the respective optical properties. (c) 2004 american institute of physics. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-09 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8046]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yang H,Yang H,Wang YT,et al. Investigations on V-defects in quaternary AlInGaN epilayers[J]. applied physics letters,2004,84(26):5449-5451. |
| APA | Yang H,Yang H,Wang YT,&Jiang DS.(2004).Investigations on V-defects in quaternary AlInGaN epilayers.applied physics letters,84(26),5449-5451. |
| MLA | Yang H,et al."Investigations on V-defects in quaternary AlInGaN epilayers".applied physics letters 84.26(2004):5449-5451. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。