Characterization of polymorphous silicon thin film and solar cells
文献类型：期刊论文
| 作者 | Zhang, S ; Xu, Y ; Liao, X ; Martins, R ; Fortunato, E ; Hu, Z ; Kong, G |
| 刊名 | advanced materials forum ii
 |
| 出版日期 | 2004 |
| 卷号 | 455-456期号:0页码:77-80 |
| 关键词 | polymorphous silicon thin film solar cell |
| ISSN号 | 0255-5476 |
| 通讯作者 | zhang, s, chinese acad sci, inst semicond, state key lab surface phys, beijing 100083, peoples r china. 电子邮箱地址: sz@uninova.pt |
| 中文摘要 | polymorphous silicon (pm-si:h) films have been prepared by a new regime of plasma enhanced chemical vapour deposition in the region adjacent of phase transition from amorphous to microcrystalline state. comparing to the conventional amorphous silicon (a-si:h), the pm-si:h has higher photoconductivity (sigma(ph)), better stability, and a broader light spectral response range in the longer wavelength range. it can be found from raman spectra that there is a notable improvement in the medium range order. there are a blue shift for the stretching mode of ir spectra and a red shift for the wagging mode. the shifts are attributed to the variation of the microstructure. by using pm-si:h film as intrinsic layer, a p-i-n junction solar cell was prepared with the initial efficiency of 8.51% and a stabilized efficiency of 8.01% (am1.5, 100mw/cm(2)) at room temperature (t-r). |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-09 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8052]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang, S,Xu, Y,Liao, X,et al. Characterization of polymorphous silicon thin film and solar cells[J]. advanced materials forum ii,2004,455-456(0):77-80. |
| APA | Zhang, S.,Xu, Y.,Liao, X.,Martins, R.,Fortunato, E.,...&Kong, G.(2004).Characterization of polymorphous silicon thin film and solar cells.advanced materials forum ii,455-456(0),77-80. |
| MLA | Zhang, S,et al."Characterization of polymorphous silicon thin film and solar cells".advanced materials forum ii 455-456.0(2004):77-80. |
入库方式： OAI收割
来源：半导体研究所
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