中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Antiphase state in passively Q-switched Yb : YAG microchip multimode lasers with a saturable absorber GaAs

文献类型:期刊论文

作者Zhang QL ; Feng BH ; Zhang DX ; Fu PM ; Zhang ZG ; Zhao ZW ; Deng PZ ; Xu J ; Xu XD ; Wang YG ; Ma XY
刊名physical review a
出版日期2004
卷号69期号:5页码:art.no.053815
关键词INTRACAVITY 2ND-HARMONIC GENERATION
ISSN号1050-2947
通讯作者zhang, ql, chinese acad sci, inst phys, lab opt phys, pob 603, beijing 100080, peoples r china.
中文摘要we report on recent experimental results of the spontaneous antiphase dynamics that occurs in a laser-diode-pumped multimode passively q-switched microchip yb:yag (where yag is yttrium aluminum garnet) lasers with a saturable absorber gaas. we observe that the pulse sequence of the first mode characterized by one, two, and three pulses as a group and all the modes display an antiphase state as the pumping ratio rises. we modify the multimode rate equations to account for nonlinear absorption due to gaas in the presence of spatial hole burning. we perform numerical simulations based on the proposed rate equations and reproduce the observed antiphase state of two and three active modes.
学科主题半导体器件
收录类别SCI
语种英语
公开日期2010-03-09
源URL[http://ir.semi.ac.cn/handle/172111/8066]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Zhang QL,Feng BH,Zhang DX,et al. Antiphase state in passively Q-switched Yb : YAG microchip multimode lasers with a saturable absorber GaAs[J]. physical review a,2004,69(5):art.no.053815.
APA Zhang QL.,Feng BH.,Zhang DX.,Fu PM.,Zhang ZG.,...&Ma XY.(2004).Antiphase state in passively Q-switched Yb : YAG microchip multimode lasers with a saturable absorber GaAs.physical review a,69(5),art.no.053815.
MLA Zhang QL,et al."Antiphase state in passively Q-switched Yb : YAG microchip multimode lasers with a saturable absorber GaAs".physical review a 69.5(2004):art.no.053815.

入库方式: OAI收割

来源:半导体研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。