Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer
文献类型：期刊论文
| 作者 | Luo, XH ; Wang, RM ; Zhang, XP ; Zhang, HZ ; Yu, DP ; Luo, MC |
| 刊名 | micron
 |
| 出版日期 | 2004 |
| 卷号 | 35期号:6页码:475-480 |
| 关键词 | transmission electron microscopy electron energy loss spectroscopy molecular beam epitaxy gallium nitride CHEMICAL-VAPOR-DEPOSITION EPITAXY LAYER |
| ISSN号 | 0968-4328 |
| 通讯作者 | wang, rm, peking univ, electron microscopy lab, beijing 100871, peoples r china. 电子邮箱地址: rmwang@pku.edu.cn |
| 中文摘要 | polycrystalline gan thin films have been deposited epitaxially on a zno-buffered (111)-oriented si substrate by molecular beam epitaxy. the microstructural and compositional characteristics of the films were studied by analytical transmission electron microscopy (tem). a sio2 amorphous layer about 3.5 nm in thickness between the si/zno interface has been identified by means of spatially resolved electron energy loss spectroscopy. cross-sectional and plan-view tem investigations reveal (gan/zno/sio2/si) layers exhibiting definite a crystallographic relationship: [111](si)//[111](zno)//[0001](gan) along the epitaxy direction. gan films are polycrystalline with nanoscale grains (similar to100 nm in size) grown along [0001] direction with about 20degrees between the (1 (1) over bar 00) planes of adjacent grains. a three-dimensional growth mode for the buffer layer and the film is proposed to explain the formation of the as-grown polycrystalline gan films and the functionality of the buffer layer. (c) 2004 elsevier ltd. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-09 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8070]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Luo, XH,Wang, RM,Zhang, XP,et al. Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer[J]. micron,2004,35(6):475-480. |
| APA | Luo, XH,Wang, RM,Zhang, XP,Zhang, HZ,Yu, DP,&Luo, MC.(2004).Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer.micron,35(6),475-480. |
| MLA | Luo, XH,et al."Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer".micron 35.6(2004):475-480. |
入库方式： OAI收割
来源：半导体研究所
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