A novel extremely broadband superluminescent diode based on symmetric graded tensile-strained bulk InGaAs
文献类型：期刊论文
| 作者 | Wang, SR ; Wang, W ; Liu, ZH ; Zhu, HL ; Zhang, RY ; Zha, LJ ; Zhou, F ; Ding, Y ; Wang, LF |
| 刊名 | japanese journal of applied physics part 1-regular papers short notes & review papers
 |
| 出版日期 | 2004 |
| 卷号 | 43期号:4a页码:1330-1331 |
| 关键词 | low-pressure metalorganic vapor-phase epiyaxy (LP-MOVPE) |
| ISSN号 | 0021-4922 |
| 通讯作者 | wang, sr, chinese acad sci, inst semicond, ctr optoelect res & dev, beijing 100083, peoples r china. |
| 中文摘要 | a novel broadband superluminescent diode (sld), which has a symmetric graded tensile-strained bulk ingaas active region, is developed. the symmetric-graded tensile-strained bulk ingaas is achieved by changing the group iii tmga source flow only during its growth process by low-pressure metalorganic vapor-phase epitaxy (lp-movpe), in which the much different tensile strain is introduced simultaneously. at 200ma injection current, the full width at half maximum (fwhm) of the emission spectrum of the slid can be up to 122nm, covering the range of 1508-1630nm, and the output power is 11.5mw. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-09 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8082]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang, SR,Wang, W,Liu, ZH,et al. A novel extremely broadband superluminescent diode based on symmetric graded tensile-strained bulk InGaAs[J]. japanese journal of applied physics part 1-regular papers short notes & review papers,2004,43(4a):1330-1331. |
| APA | Wang, SR.,Wang, W.,Liu, ZH.,Zhu, HL.,Zhang, RY.,...&Wang, LF.(2004).A novel extremely broadband superluminescent diode based on symmetric graded tensile-strained bulk InGaAs.japanese journal of applied physics part 1-regular papers short notes & review papers,43(4a),1330-1331. |
| MLA | Wang, SR,et al."A novel extremely broadband superluminescent diode based on symmetric graded tensile-strained bulk InGaAs".japanese journal of applied physics part 1-regular papers short notes & review papers 43.4a(2004):1330-1331. |
入库方式： OAI收割
来源：半导体研究所
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