Carrier transport assisted by dopants in doped poly(N-vinylcarbozole) light-emitting diodes
文献类型：期刊论文
| 作者 | Chen, XH ; Liu, M ; Xu, Z ; Hou, YB ; Teng, F ; Xu, XR |
| 刊名 | journal of physics d-applied physics
 |
| 出版日期 | 2004 |
| 卷号 | 37期号:7页码:1007-1011 |
| 关键词 | TRANSIENT ELECTROLUMINESCENCE |
| ISSN号 | 0022-3727 |
| 通讯作者 | chen, xh, beijing jiaotong univ, inst optoelect technol, beijing 100044, peoples r china. |
| 中文摘要 | we have investigated the transient electroluminescence (el) onset of the double-layer light-emitting devices made from poly(n-vinylcarbozole) (pvk) doped with 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl)-4h-pyran (dcjtb) and tris(8-hydroxy-quinoline) aluminium (alq(3)). for the double-layered device in which pvk was doped with 0.1 wt% dcjtb, the el onset of pvk lags that of dcjtb and alq(3), while the el onset of dcjtb and alq(3) is simultaneous. however, the el emission of the double-layered device of pvk/alq(3) originates only from alq(3). the results show that dcjtb dopants can not only help to tunnel electrons from alq(3) zone to pvk but can also assist electrons transfer in pvk under high electric field by hopping between dcjtb molecules or from dcjtb to pvk sites at a low doping concentration of 0.1 wt%. when the dcjtb doping concentration is 4.0 wt%, the el onset of alq(3) lags that of dcjtb. the difference in the el onsets of dcjtb, alq(3) and pvk is attributed to the slow build-up of the internal space charge in the vicinity of the interface between pvk and alq(3). the electron potential difference of the interface between alq(3) and pvk doped by dcjtb can be adjusted by changing the dcjtb doping concentration in double-layer devices. |
| 学科主题 | 半导体器件 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-09 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8098]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen, XH,Liu, M,Xu, Z,et al. Carrier transport assisted by dopants in doped poly(N-vinylcarbozole) light-emitting diodes[J]. journal of physics d-applied physics,2004,37(7):1007-1011. |
| APA | Chen, XH,Liu, M,Xu, Z,Hou, YB,Teng, F,&Xu, XR.(2004).Carrier transport assisted by dopants in doped poly(N-vinylcarbozole) light-emitting diodes.journal of physics d-applied physics,37(7),1007-1011. |
| MLA | Chen, XH,et al."Carrier transport assisted by dopants in doped poly(N-vinylcarbozole) light-emitting diodes".journal of physics d-applied physics 37.7(2004):1007-1011. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。