Ordering growth of InAs quantum dots on ultra-thin InGaAs strained layer
文献类型：期刊论文
| 作者 | Zhang, CL ; Wang, ZG ; Zhao, FA ; Xu, B ; Jin, P |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2004 |
| 卷号 | 265期号:1-2页码:60-64 |
| 关键词 | line defects |
| ISSN号 | 0022-0248 |
| 通讯作者 | zhang, cl, chinese acad sci, inst semicond, lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: zhangchl@red.semi.ac.cn |
| 中文摘要 | inas quantum dots (qds) were grown on ultra-thin in0.15ga0.85as strained layers by molecular beam epitaxy on gaas (00 1) substrates. combining reflection high-energy electron diffraction, atomic force microscopy and transmission electron microscopy, we analyzed the stress field of dislocations in the strained layer/substrate interface. specially, we revealed the relative position of qds and dislocations. we found that the difference of the stress field around dislocations is prominent when the strained layer is ultra-thin and the stress field will directly affect the following growth. on the strained layer surface, in0.15ga0.85as ridges will form at the inclined upside of dislocations. then, inas qds will prefer nucleating on the ridges, there is relatively small stress between inas and in0.15ga0.85as. by selecting ultra-thin in0.15ga0.85as layer (50 nm) and controlling the qd layer at just form qds, we obtained ordered inas qds. (c) 2004 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-09 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8108]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang, CL,Wang, ZG,Zhao, FA,et al. Ordering growth of InAs quantum dots on ultra-thin InGaAs strained layer[J]. journal of crystal growth,2004,265(1-2):60-64. |
| APA | Zhang, CL,Wang, ZG,Zhao, FA,Xu, B,&Jin, P.(2004).Ordering growth of InAs quantum dots on ultra-thin InGaAs strained layer.journal of crystal growth,265(1-2),60-64. |
| MLA | Zhang, CL,et al."Ordering growth of InAs quantum dots on ultra-thin InGaAs strained layer".journal of crystal growth 265.1-2(2004):60-64. |
入库方式： OAI收割
来源：半导体研究所
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