Optical properties of boron-doped Si nanowires
文献类型：期刊论文
| 作者 | Zeng, XB ; Liao, XB ; Wang, B ; Dai, ST ; Xu, YY ; Xiang, XB ; Hu, ZH ; Diao, HW ; Kong, GL |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2004 |
| 卷号 | 265期号:1-2页码:94-98 |
| 关键词 | chemical vapor deposition processes |
| ISSN号 | 0022-0248 |
| 通讯作者 | zeng, xb, chinese acad sci, inst semicond, state key lab surface phys, pob 912, beijing 100083, peoples r china. 电子邮箱地址: xbzeng@mail.semi.ac.cn |
| 中文摘要 | raman scattering and photoluminescence (pl) of boron-doped silicon nanowires have been investigated. raman spectra showed a band at 480 cm(-1), indicating that the crystallinity of the nanowires was suppressed by boron doping. pl taken from b-doped sinws at room temperature exhibited three distinct emission peaks at 1.34, 1.42. and 1.47 ev and the pl intensity was much stronger than that of undoped sinws. the increased pl intensity should be very profitable for nano-optoelectronics. (c) 2004 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-09 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8112]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zeng, XB,Liao, XB,Wang, B,et al. Optical properties of boron-doped Si nanowires[J]. journal of crystal growth,2004,265(1-2):94-98. |
| APA | Zeng, XB.,Liao, XB.,Wang, B.,Dai, ST.,Xu, YY.,...&Kong, GL.(2004).Optical properties of boron-doped Si nanowires.journal of crystal growth,265(1-2),94-98. |
| MLA | Zeng, XB,et al."Optical properties of boron-doped Si nanowires".journal of crystal growth 265.1-2(2004):94-98. |
入库方式： OAI收割
来源：半导体研究所
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