Amorphous silicon carbide films prepared by H-2 diluted silane-methane plasma
文献类型：期刊论文
| 作者 | Hu ZH ; Liao XB ; Diao HW ; Kong GL ; Zeng XB ; Xu YY |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2004 |
| 卷号 | 264期号:1-3页码:7-12 |
| ISSN号 | 0022-0248 |
| 关键词 | annealing |
| 通讯作者 | hu, zh, yunnan natl univ, solar energy res inst, kunming 650092, peoples r china. 电子邮箱地址: zhhhu@red.semi.ac.cn |
| 中文摘要 | this paper reports on the preparation and characterization of hydrogenated amorphous silicon carbide films prepared by h-2 diluted silane-methane plasma. carbon-rich a-sic:h film with band gap of up to 3.3 ev has been achieved. ir and uv vis spectra were employed to characterize the chemical bonding and optical properties of as-prepared films. it is shown that hydrogen dilution is crucial in obtaining these wide band gap carbon-rich films. raman and pl measurements were performed to probe the microstructure and photoelectronic properties of these films before and after annealing. films with intermediate carbon concentration seem more defective and exhibit stronger photoluminescence and subband absorption than others. films with different compositions exhibit different annealing behaviours. for silicon rich and carbon rich films, high temperature annealing results in the formation of silicon crystallites and graphite clusters, respectively. (c) 2003 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-09 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8132]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Hu ZH,Liao XB,Diao HW,et al. Amorphous silicon carbide films prepared by H-2 diluted silane-methane plasma[J]. journal of crystal growth,2004,264(1-3):7-12. |
| APA | Hu ZH,Liao XB,Diao HW,Kong GL,Zeng XB,&Xu YY.(2004).Amorphous silicon carbide films prepared by H-2 diluted silane-methane plasma.journal of crystal growth,264(1-3),7-12. |
| MLA | Hu ZH,et al."Amorphous silicon carbide films prepared by H-2 diluted silane-methane plasma".journal of crystal growth 264.1-3(2004):7-12. |
入库方式： OAI收割
来源：半导体研究所
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