Study on the perfection of in situ P-injection synthesis LEC-InP single crystals
文献类型：期刊论文
| 作者 | Zhou XL
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2004 |
| 卷号 | 264期号:1-3页码:17-20 |
| 关键词 | etch-pit density |
| ISSN号 | 0022-0248 |
| 通讯作者 | zhou, xl, hebei semicond res inst, pob 17940,shijiazhuang, hebei 050051, peoples r china. 电子邮箱地址: tnsun@heinfo.net |
| 中文摘要 | undoped, s-doped and fe-doped inp crystals with diameter up to 4-inch have been pulled in drop 10 0 drop -direction under p-rich condition by a rapid p-injection in situ synthesis liquid encapsulated czochralski (lec) method. high speed photoluminescence mapping, etch-pit density (epd) mapping and scanning electron microscopy have been used to characterize the samples of the single crystal ingots. dislocations and electrical homogeneity of these samples are investigated and compared. by controlling the thermal field and the solid-liquid interface shape, 4-inch low-epd inp single crystals have been successfully grown by the rapid p-injection synthesis lec method. the epd across the wafer of the ingots is less than 5 x 10(4) cm(-2). cluster defects with a pore center are observed in the p-rich lec grown inp ingots. these defects are distributed irregularly on a wafer and are surrounded by a high concentration of dislocations. the uniformity of the pl intensity across the wafer is influenced by these defects. (c) 2004 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-09 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8134]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhou XL. Study on the perfection of in situ P-injection synthesis LEC-InP single crystals[J]. journal of crystal growth,2004,264(1-3):17-20. |
| APA | Zhou XL.(2004).Study on the perfection of in situ P-injection synthesis LEC-InP single crystals.journal of crystal growth,264(1-3),17-20. |
| MLA | Zhou XL."Study on the perfection of in situ P-injection synthesis LEC-InP single crystals".journal of crystal growth 264.1-3(2004):17-20. |
入库方式： OAI收割
来源：半导体研究所
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