Nonradiative recombination centers in Ga(As,N) and their annealing behavior studied by Raman spectroscopy
文献类型：期刊论文
| 作者 | Jiang DS
|
| 刊名 | applied physics letters
 |
| 出版日期 | 2004 |
| 卷号 | 84期号:11页码:1859-1861 |
| 关键词 | 1.3 MU-M |
| ISSN号 | 0003-6951 |
| 通讯作者 | ramsteiner, m, paul drude inst festkorperelekt, hausvogteipl 5-7, d-10117 berlin, germany. 电子邮箱地址: mer@pdi-berlin.de |
| 中文摘要 | nitrogen-related defects in diluted ga(as,n) have been detected by raman scattering in resonance with the localized e+ transition. these defects are attributed to local vibrational modes of nitrogen dimers on ga- and as-lattice sites. rapid thermal annealing under appropriate conditions is found to be able to remove the nitrogen dimers. the required minimum annealing temperature coincides with the threshold-like onset of strong, near-band-gap photoluminescence. this finding suggests that the nitrogen dimers are connected with nonradiative recombination centers. (c) 2004 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-09 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8154]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Jiang DS. Nonradiative recombination centers in Ga(As,N) and their annealing behavior studied by Raman spectroscopy[J]. applied physics letters,2004,84(11):1859-1861. |
| APA | Jiang DS.(2004).Nonradiative recombination centers in Ga(As,N) and their annealing behavior studied by Raman spectroscopy.applied physics letters,84(11),1859-1861. |
| MLA | Jiang DS."Nonradiative recombination centers in Ga(As,N) and their annealing behavior studied by Raman spectroscopy".applied physics letters 84.11(2004):1859-1861. |
入库方式： OAI收割
来源：半导体研究所
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