Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodiodes (RCE-PD)
文献类型：期刊论文
| 作者 | Yu JZ ; Li C ; Cheng BW ; Wang QM |
| 刊名 | gettering and defect engineering in semiconductor technology
 |
| 出版日期 | 2004 |
| 卷号 | 95-96期号:0页码:255-260 |
| 关键词 | DBR (distributed bragg reflector) |
| ISSN号 | 1012-0394 |
| 通讯作者 | yu, jz, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. 电子邮箱地址: jzyu@red.semi.ac.cn |
| 中文摘要 | si1-xgex/si optoelectronic devices are promising for the monolithic integration with silicon-based microelectronics. sige/si mqw rce-pd (resonant-cavity-enhanced photodiodes) with different structures were investigated in this work. design and fabrication of top- and bottom-incident rce-pd, such as growth of sige mqw (multiple quantum wells) on si and soi (si on insulator) wafers, bonding between sige epitaxial wafer and sor (surface optical reflector) consisting of sio2/si dbr (distributed bragg reflector) films on si, and performances of rce-pd, were presented. the responsivity of 44ma/w at 1.314 mum and the fwhm of 6nm were obtained at bias of 10v. the highest external quantum efficiency measured in the investigation is 4.2%. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-09 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8162]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yu JZ,Li C,Cheng BW,et al. Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodiodes (RCE-PD)[J]. gettering and defect engineering in semiconductor technology,2004,95-96(0):255-260. |
| APA | Yu JZ,Li C,Cheng BW,&Wang QM.(2004).Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodiodes (RCE-PD).gettering and defect engineering in semiconductor technology,95-96(0),255-260. |
| MLA | Yu JZ,et al."Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodiodes (RCE-PD)".gettering and defect engineering in semiconductor technology 95-96.0(2004):255-260. |
入库方式： OAI收割
来源：半导体研究所
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