中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Low power 2 x 2 thermo-optic SOI waveguide switch fabricated by anisotropy chemical etching

文献类型:期刊论文

作者Xia JS ; Yu JZ ; Wang ZT ; Fan ZC ; Chen SW
刊名optics communications
出版日期2004
卷号232期号:1-6页码:223-228
ISSN号0030-4018
关键词optical switch
通讯作者xia, js, chinese acad sci, inst semicond, state key lab integrated optoelect, hai dian,pob 912, beijing 100083, peoples r china. 电子邮箱地址: jsxia@red.semi.ac.cn
中文摘要a 2 x 2 thermo-optic (to) mach-zehnder (mz) switch based on silicon waveguides with large cross section was designed and fabricated on silicon-on-insulator (soi) wafer. the multi-mode interferometers (mmi) were used as power splitter and combiner in mz structure. in order to get smooth interface, anisotropy chemical wet-etching of silicon was used to fabricate the waveguides instead of dry-etching. additional grooves were introduced to reduce power consumption. the device has a low switching power of 235 mw and a switching speed of 60 mus. (c) 2004 elsevier b.v. all rights reserved.
学科主题光电子学
收录类别SCI
语种英语
公开日期2010-03-09
源URL[http://ir.semi.ac.cn/handle/172111/8164]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Xia JS,Yu JZ,Wang ZT,et al. Low power 2 x 2 thermo-optic SOI waveguide switch fabricated by anisotropy chemical etching[J]. optics communications,2004,232(1-6):223-228.
APA Xia JS,Yu JZ,Wang ZT,Fan ZC,&Chen SW.(2004).Low power 2 x 2 thermo-optic SOI waveguide switch fabricated by anisotropy chemical etching.optics communications,232(1-6),223-228.
MLA Xia JS,et al."Low power 2 x 2 thermo-optic SOI waveguide switch fabricated by anisotropy chemical etching".optics communications 232.1-6(2004):223-228.

入库方式: OAI收割

来源:半导体研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。