Mode characteristics of semiconductor equilateral triangle microcavities with side length of 5-20 mu m
文献类型：期刊论文
| 作者 | Lu, QY ; Chen, XH ; Guo, WH ; Yu, LJ ; Huang, YZ ; Wang, J ; Luo, Y |
| 刊名 | ieee photonics technology letters
 |
| 出版日期 | 2004 |
| 卷号 | 16期号:2页码:359-361 |
| 关键词 | GaInAsP-InP |
| ISSN号 | 1041-1135 |
| 通讯作者 | lu, qy, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. 电子邮箱地址: luqy@red.semi.ac.cn |
| 中文摘要 | semiconductor equilateral triangle microresonators (etrs) with side length of 5, 10, and 20 mum are fabricated by the two-step inductively coupled plasma (icp) etching technique. the mode properties of fabricated ingaasp etrs are investigated experimentally by photoluminescence (pl) with the pumping source of a 980-nm semiconductor laser and distinct peaks are observed in the measured pl spectra. the wavelength spacings of the distinct peaks agree very well with the theoretical longitudinal mode intervals of the fundamental transverse modes in the etrs, which verifies that the distinct peaks are corresponding to the enhancement of resonant modes. the mode quality factors are calculated from the width of the resonant peaks of the pl spectra, which are about 100 for the etr with side length of 20 mum. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-09 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8178]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Lu, QY,Chen, XH,Guo, WH,et al. Mode characteristics of semiconductor equilateral triangle microcavities with side length of 5-20 mu m[J]. ieee photonics technology letters,2004,16(2):359-361. |
| APA | Lu, QY.,Chen, XH.,Guo, WH.,Yu, LJ.,Huang, YZ.,...&Luo, Y.(2004).Mode characteristics of semiconductor equilateral triangle microcavities with side length of 5-20 mu m.ieee photonics technology letters,16(2),359-361. |
| MLA | Lu, QY,et al."Mode characteristics of semiconductor equilateral triangle microcavities with side length of 5-20 mu m".ieee photonics technology letters 16.2(2004):359-361. |
入库方式： OAI收割
来源：半导体研究所
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