中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Effect of nanoclusters induced by Si implantation on total dose radiation response of a SOI wafer

文献类型:期刊论文

作者Wu, AM ; Chen, J ; Zhang, EX ; Wang, X(重点实验室) ; Zhang, ZX(重点实验室)
刊名SEMICONDUCTOR SCIENCE AND TECHNOLOGY
出版日期2008
卷号23期号:1页码:15015
关键词Engineering Materials Science Physics Electrical & Electronic Multidisciplinary Condensed Matter
ISSN号0268-1242
学科主题Engineering; Materials Science; Physics
收录类别SCI
原文出处10.1088/0268-1242/23/1/015015
语种英语
公开日期2013-05-10
源URL[http://ir.sim.ac.cn/handle/331004/115086]  
专题上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文
推荐引用方式
GB/T 7714
Wu, AM,Chen, J,Zhang, EX,et al. Effect of nanoclusters induced by Si implantation on total dose radiation response of a SOI wafer[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2008,23(1):15015.
APA Wu, AM,Chen, J,Zhang, EX,Wang, X,&Zhang, ZX.(2008).Effect of nanoclusters induced by Si implantation on total dose radiation response of a SOI wafer.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,23(1),15015.
MLA Wu, AM,et al."Effect of nanoclusters induced by Si implantation on total dose radiation response of a SOI wafer".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 23.1(2008):15015.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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