Interfacial and electrical characterization of HfO(2) gate dielectric film with a blocking layer of Al(2)O(3)
文献类型：期刊论文
| 作者 | Cheng, XH（重点实验室） ; He, DW ; Song, ZR（重点实验室） ; Yu, YH（重点实验室） ; Zhao, QT ; Shen, DS |
| 刊名 | ULIS 2009: 10TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION OF SILICON
 |
| 出版日期 | 2009 |
| 页码 | 205-208 |
| 关键词 | Engineering Materials Science Electrical & Electronic Multidisciplinary |
| 学科主题 | Engineering; Materials Science |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-05-10 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/115092]  |
| 专题 | 上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文 |
| 推荐引用方式 GB/T 7714 | Cheng, XH,He, DW,Song, ZR,et al. Interfacial and electrical characterization of HfO(2) gate dielectric film with a blocking layer of Al(2)O(3)[J]. ULIS 2009: 10TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION OF SILICON,2009:205-208. |
| APA | Cheng, XH,He, DW,Song, ZR,Yu, YH,Zhao, QT,&Shen, DS.(2009).Interfacial and electrical characterization of HfO(2) gate dielectric film with a blocking layer of Al(2)O(3).ULIS 2009: 10TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION OF SILICON,205-208. |
| MLA | Cheng, XH,et al."Interfacial and electrical characterization of HfO(2) gate dielectric film with a blocking layer of Al(2)O(3)".ULIS 2009: 10TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION OF SILICON (2009):205-208. |
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