中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Investigation on Silicon on Insulator Fabricated by Separation by Implanted Oxygen Layer Transfer

文献类型:期刊论文

作者Wei, X ; Wu, AM(重点实验室) ; Wang, X(重点实验室) ; Li, XY ; Ye, F ; Chen, J ; Chen, M ; Zhang, B(重点实验室) ; Lin, CL(重点实验室) ; Zhang, M ; Wang, X(重点实验室)
刊名JOURNAL OF THE ELECTROCHEMICAL SOCIETY
出版日期2010
卷号157期号:1页码:H81-H85
关键词Electrochemistry Materials Science Coatings & Films
ISSN号0013-4651
学科主题Electrochemistry; Materials Science
收录类别SCI
原文出处10.1149/1.3253571
语种英语
公开日期2013-05-10
源URL[http://ir.sim.ac.cn/handle/331004/115107]  
专题上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文
推荐引用方式
GB/T 7714
Wei, X,Wu, AM,Wang, X,et al. Investigation on Silicon on Insulator Fabricated by Separation by Implanted Oxygen Layer Transfer[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY,2010,157(1):H81-H85.
APA Wei, X.,Wu, AM.,Wang, X.,Li, XY.,Ye, F.,...&Wang, X.(2010).Investigation on Silicon on Insulator Fabricated by Separation by Implanted Oxygen Layer Transfer.JOURNAL OF THE ELECTROCHEMICAL SOCIETY,157(1),H81-H85.
MLA Wei, X,et al."Investigation on Silicon on Insulator Fabricated by Separation by Implanted Oxygen Layer Transfer".JOURNAL OF THE ELECTROCHEMICAL SOCIETY 157.1(2010):H81-H85.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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