中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
The structure and electrical properties of HfTaON high-k films prepared by DIBSD

文献类型:期刊论文

作者Yu, T ; Jin, CG ; Yang, XM ; Dong, YJ ; Zhang, HY ; Zhuge, LJ ; Wu, XM ; Wu, ZF
刊名APPLIED SURFACE SCIENCE
出版日期2012
卷号258期号:7页码:2953-2958
关键词Chemistry Materials Science Physics Physics Physical Coatings & Films Applied Condensed Matter
ISSN号0169-4332
学科主题Chemistry; Materials Science; Physics
收录类别SCI
原文出处10.1016/j.apsusc.2011.11.015
语种英语
公开日期2013-05-10
源URL[http://ir.sim.ac.cn/handle/331004/115141]  
专题上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文
推荐引用方式
GB/T 7714
Yu, T,Jin, CG,Yang, XM,et al. The structure and electrical properties of HfTaON high-k films prepared by DIBSD[J]. APPLIED SURFACE SCIENCE,2012,258(7):2953-2958.
APA Yu, T.,Jin, CG.,Yang, XM.,Dong, YJ.,Zhang, HY.,...&Wu, ZF.(2012).The structure and electrical properties of HfTaON high-k films prepared by DIBSD.APPLIED SURFACE SCIENCE,258(7),2953-2958.
MLA Yu, T,et al."The structure and electrical properties of HfTaON high-k films prepared by DIBSD".APPLIED SURFACE SCIENCE 258.7(2012):2953-2958.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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